2SB1218A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1819A
s ^Features
q High foward current transfer ratio h_FE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–45
V
Collector to emitter voltage V_CEO
–45
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S-Mini Type Package
Marking symbol : B
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
–0.1
µA
–100 µA
–45
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –2mA
–45
V
–7
V
160
460
Collector to emitter saturation voltage V_CE(sat)
I_C = –100mA, I_B = –10mA
– 0.3 – 0.5
V
Transition frequency
f_T
V_CB = –10V, I_E = 1mA, f = 200MHz
80
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
2.7
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
160 ~ 260
BQ
R
210 ~ 340
BR
S
290 ~ 460
BS
1