2SB1209 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planer type(For low-frequency amplification)

Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
s ^Features
q High collector to base voltage V_CBO.
q High collector to emitter voltage V_CEO.
q Low collector to emitter saturation voltage V_CE(sat).
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–400
V
Collector to emitter voltage V_CEO
–400
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
R0.7
0.85
0.55±0.1
0.45±0.05
3
2
1
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = –100µA, I_E = 0
–400
V
Collector to emitter voltage
V_CEO
I_C = –500µA, I_B = 0
–400
V
Emitter to base voltage
V_EBO
I_E = –100µA, I_C = 0
–5
V
Forward current transfer ratio
h_FE
V_CE = –5V, I_C = –30mA
40
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = –1mA
– 0.6
V
Base to emitter saturation voltage V_BE(sat)
I_C = –50mA, I_B = –5mA
–1.5
V
Transition frequency
f_T
V_CB = –30V, I_E = 20mA, f = 200MHz
50
MHz
Collector output capacitance
C_ob
V_CB = –30V, I_E = 0, f = 1MHz
9
pF
1