2SB1207 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-voltage output amplification)

Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–15
V
Collector to emitter voltage V_CEO
–10
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –10V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –2V, I_C = –0.5A^*2
V_CE = –2V, I_C = –1A^*2
I_C = –0.4A, I_B = –8mA
I_C = –0.4A, I_B = –8mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
typ
max Unit
–100 nA
–15
V
–10
V
–7
V
130
350
60
– 0.16 – 0.3
V
– 0.8 –1.2
V
130
MHz
22
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
R
S
h_FE1
130 ~ 220 180 ~ 350
1