2SB1193 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Midium-Speed Power Switching

Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
For midium-speed power switching
Complementary to 2SD1773
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio h_FE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−120
V
Collector-emitter voltage (Base open) V_CEO
−120
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−8
A
Peak collector current
I_CP
−12
A
Collector power dissipation
P_C
50
W
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 ∼ +150 °C
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter sustaining voltage ^*
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO(SUS)
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
t_on
t_stg
t_f
I_C = −2 A, L = 10 mH
I_E = −50 mA, I_C = 0
V_CB = −120 V, I_E = 0
V_CE = −100 V, I_B = 0
V_CE = −3 V, I_C = −4 A
I_C = −4 A, I_B = −8 mA
I_C = −8 A, I_B = −80 mA
I_C = −4 A, I_B = −8 mA
I_C = −8 A, I_B = −80 mA
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = −4 A, I_B1 = −8 mA, I_B2 = 8 mA
V_CC = −50 V
−120
−7
1 000
V
V
−100 µA
−10 µA
20 000 
−1.5
V
−3.0
−2.0
V
−3.5
15
MHz
0.7
µs
3.5
µs
2.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: V_CEO(SUS) test circuit _{50 Hz/60 Hz}
mercury relay
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: February 2003
SJD00059AED
1