2SB1179 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification And Switching

Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
■ Features
• High forward current transfer ratio h_FE which has satisfactory linearity
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB1179 V}CBO
−60
V
(Emitter open)
2SB1179A
−80
Collector-emitter voltage ^{2SB1179 V}CEO
−60
V
(Base open)
2SB1179A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
15
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
■ Electrical Characteristics T_C = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1179 VCEO IC = −30 mA, IB = 0
−60
V
(Base open)
2SB1179A
−80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
V_BE
2SB1179 I_CBO
2SB1179A
Collector-emitter cutoff
current (Base open)
2SB1179 I_CEO
2SB1179A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
I_EBO
h_FE1
h_FE2 ^*
V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CE = −3 V, I_C = −3 A
V_CB = −60 V, I_E = 0
V_CB = −80 V, I_E = 0
V_CE = −40 V, I_B = 0
V_CE = −40 V, I_B = 0
V_EB = −5 V, I_C = 0
V_CE = −3 V, I_C = − 0.5 A
V_CE = −3 V, I_C = −3 A
I_C = −3 A, I_B = −12 mA
I_C = −5 A, I_B = −20 mA
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = −3 A, I_B1 = −12 mA, I_B2 = 12 mA
V_CC = −50 V
1 000
2 000
−2.5
V
−200 µA
−200
−500 µA
−500
−2
mA

10 000
−2
V
−4
20
MHz
0.3
µs
2.0
µs
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE2
2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00055AED
1