2SB1175 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SB1175
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1745
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Satisfactory linearity of forward current transfer ratio h_FE
• Large collector current I_C
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−130
V
Collector-emitter voltage (Base open) V_CEO
−80
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
15
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −10 mA, I_B = 0
−80
Collector-base cutoff current (Emitter open) I_CBO V_CB = −100 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio
h_FE1 V_CE = −2 V, I_C = − 0.1 A
45
h_FE2 ^* V_CE = −2 V, I_C = −1 A
90
Collector-emitter saturation voltage
V_CE(sat) I_C = −3 A, I_B = − 0.15 A
Base-emitter saturation voltage
V_BE(sat) I_C = −3 A, I_B = − 0.15 A
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
Turn-on time
Storage time
t_on
I_C = −1 A, I_B1 = − 0.1 A, I_B2 = 0.1 A
t_stg
V_CC = −50 V
Fall time
t_f
−10
−50
260
− 0.5
−1.5
30
0.15
0.8
0.15
V
µA
µA

V
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE2
90 to 180 130 to 260
Publication date: March 2003
SJD00051AED
1