2SB1174 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For voltage switching

Power Transistors
2SB1174
Silicon PNP epitaxial planar type
For voltage switching
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Satisfactory linearity of forward current transfer ratio h_FE
• Large collector current I_C
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−130
V
Collector-emitter voltage (Base open) V_CEO
−80
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−6
A
Collector power dissipation
P_C
15
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_EBO
h_FE1
h_FE2 ^*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
I_C = −10 mA, I_B = 0
−80
V_CB = −100 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −2 V, I_C = − 0.1 A
45
V_CE = −2 V, I_C = − 0.5 A
90
I_C = −2 A, I_B = − 0.1 A
I_C = −2 A, I_B = − 0.1 A
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
I_C = − 0.5 A, I_B1 = −50 mA, I_B2 = 50 mA
V_CC = −50 V
V
−10 µA
−50 µA

260
− 0.5 V
−1.5
V
30
MHz
0.3
µs
1.1
µs
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE2
90 to 180 130 to 260
Publication date: March 2003
SJD00050AED
1