2SB1172 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■ Features
• High forward current transfer ratio h_FE which has satisfactory linearity
• Low collector-emitter saturation voltage V_CE(sat)
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB1172 V}CBO
−60
V
(Emitter open)
2SB1172A
−80
Collector-emitter voltage ^{2SB1172 V}CEO
−60
V
(Base open)
2SB1172A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−5
A
Collector power dissipation
P_C
15
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1172 VCEO IC = −30 mA, IB = 0
−60
V
(Base open)
2SB1172A
−80
Base-emitter voltage
V_BE V_CE = −4 V, I_C = −3 A
Collector-emitter cutoff 2SB1172 ICES VCE = −60 V, VBE = 0
current (E-B short)
2SB1172A
V_CE = −80 V, V_BE = 0
Collector-emitter cutoff ^{2SB1172 I}CEO ^VCE ^{= −30 V, I}B ^{= 0}
current (Emitter open)
2SB1172A
V_CE = −60 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = −4 V, I_C = −1 A
70
h_FE2 V_CE = −4 V, I_C = −3 A
10
Collector-emitter saturation voltage
V_CE(sat) I_C = −3 A, I_B = − 0.375 A
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
Turn-on time
Storage time
t_on
I_C = −1 A, I_B1 = − 0.1 A, I_B2 = 0.1 A
t_stg
V_CC = −50 V
Fall time
t_f
−1.8
V
−200 µA
−200
−300 µA
−300
−1
mA
250

−1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE2
70 to 150 120 to 250
Publication date: February 2003
SJD00048AED
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