2SB1156 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching)

Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–130
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–30
A
Collector current
I_C
–20
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
100
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2*
h_FE3
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
t_on
t_stg
t_f
V_CB = –100V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –10mA, I_B = 0
–80
V_CE = –2V, I_C = – 0.1A
45
V_CE = –2V, I_C = –3A
90
V_CE = –2V, I_C = –10A
30
I_C = –8A, I_B = – 0.4A
I_C = –20A, I_B = –2A
I_C = –8A, I_B = – 0.4A
I_C = –20A, I_B = –2A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
I_C = –3A, I_B1 = – 0.8A, I_B2 = 0.8A,
V_CC = –50V
–10
µA
–50
µA
V
260
– 0.5
V
–1.5
V
–1.5
V
–2.5
V
25
MHz
0.5
µs
1.2
µs
0.2
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank h_FE2 = 90 to 260) in the rank classification.
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