2SB1155 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching)

Power Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1706
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–130
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–25
A
Collector current
I_C
–15
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
80
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2*
h_FE3
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
t_on
t_stg
t_f
V_CB = –100V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –10mA, I_B = 0
V_CE = –2V, I_C = – 0.1A
V_CE = –2V, I_C = –3A
V_CE = –2V, I_C = –8A
I_C = –7A, I_B = – 0.35A
I_C = –15A, I_B = –1.5A
I_C = –7A, I_B = – 0.35A
I_C = –15A, I_B = –1.5A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
I_C = –7A, I_B1 = – 0.7A, I_B2 = 0.7A,
V_CC = –50V
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min
typ
max Unit
–10
µA
–50
µA
–80
V
45
90
260
30
– 0.5
V
–1.5
V
–1.5
V
–2.5
V
25
MHz
0.5
µs
1.3
µs
0.2
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1