2SB1148 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-voltage switching)

Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1148
–40
V_CBO
V
base voltage 2SB1148A
–50
Collector to 2SB1148
–20
V_CEO
V
emitter voltage 2SB1148A
–40
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–20
A
Collector current
I_C
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
–10
A
15
W
1.3
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB1148
current
2SB1148A
Emitter cutoff current
Collector to emitter 2SB1148
voltage
2SB1148A
I_CBO
I_EBO
V_CEO
V_CB = –40V, I_E = 0
V_CB = –50V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –10mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = –2V, I_C = – 0.1A
V_CE = –2V, I_C = –3A
I_C = –10A, I_B = – 0.33A
I_C = –10A, I_B = – 0.33A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
V_CB = –10V, I_E = 0, f = 1MHz
I_C = –3A, I_B1 = – 0.1A, I_B2 = 0.1A,
V_CC = –20V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
–50
µA
–50
–50
µA
–20
V
–40
45
90
260
– 0.6
V
–1.5
V
100
MHz
400
pF
0.1
µs
0.5
µs
0.1
µs
1