2SB1073 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB1073
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Large peak collector current I_CP.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–7
A
Collector current
I_C
–4
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : I
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE*1
V_CE(sat)
f_T
C_ob
V_CB = –30V, I_E = 0
–100 nA
V_EB = –7V, I_C = 0
–100 nA
I_C = –10µA, I_E = 0
–30
V
I_C = –1mA, I_B = 0
–20
V
I_E = –10µA, I_C = 0
–7
V
V_CE = –2V, I_C = –2A^*2
120
315
I_C = –3A, I_B = –0.1A^*2
– 0.6 –1
V
V_CB = –6V, I_E = 50mA, f = 200MHz
120
MHz
V_CB = –20V, I_E = 0, f = 1MHz
40
pF
*2 _{Pulse measurement}
*1_{hFE Rank classification}
Rank
Q
R
h_FE
Marking Symbol
120 ~ 205 180 ~ 315
IQ
IR
1