2SB1070 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Low-Voltage Switching

Power Transistors
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB1070 V}CBO
−40
V
(Emitter open)
2SB1070A
−50
Collector-emitter voltage 2SB1070 VCEO
−20
V
(Base open)
2SB1070A
−40
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
25
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1070 VCEO IC = −10 mA, IB = 0
−20
V
(Base open)
2SB1070A
−40
Collector-base cutoff
current (Emitter open)
2SB1070 I_CBO
2SB1070A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter saturation voltage
Collector-emitter saturation voltage
I_EBO
h_FE1
h_FE2 ^*
V_BE(sat)
V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = −40 V, I_E = 0
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −2 V, I_C = − 0.1 A
V_CE = −2 V, I_C = −1 A
I_C = −2 A, I_B = − 0.1 A
I_C = −2 A, I_B = − 0.1 A
V_CE = −5 V, I_C = − 0.5 A, f = 10 MHz
I_C = −2 A
I_B1 = − 0.2 A, I_B2 = 0.2 A
V_CC = −20 V
−50 µA
−50
−50 µA
45

90
260
−1.5
V
− 0.5 V
150
MHz
0.3
µs
0.4
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE2
90 to 180 130 to 260
Publication date: February 2003
SJD00040AED
1