2SB1063 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – High Power Amplifier Complementary Pair with 2SD1499

Power Transistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1499
■ Features
• Extremely satisfactory linearity of the forward current transfer ratio h_FE
• Wide safe operation area
• High transition frequency f_T
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−100
V
Collector-emitter voltage (Base open) V_CEO
−100
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−5
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
40
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V_BE
I_CBO
I_EBO
h_FE1
h_FE2 ^*
h_FE3
V_CE(sat)
f_T
C_ob
Conditions
V_CE = −5 V, I_C = −3 A
V_CB = −100 V, I_E = 0
V_EB = −3 V, I_C = 0
V_CE = −5 V, I_C = −20 mA
V_CE = −5 V, I_C = −1 A
V_CE = −5 V, I_C = −3 A
I_C = −3 A, I_B = − 0.3 A
V_CE = −5 V, I_C = − 0.5 A, f = 1 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
−1.8
V
−50 µA
−50 µA
20

40
200
20
−2
V
20
MHz
170
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
Q
P
h_FE2
40 to 80
60 to 120 100 to 200
Publication date: February 2003
SJD00039AED
1