2SB1054 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type

Power Transistors
2SB1054
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1485
■ Features
• Excellent collector current I_C characteristics of forward current
transfer ratio h_FE
• Wide safe operation area
• High transition frequency f_T
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−100
V
Collector-emitter voltage (Base open) V_CEO
−100
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−5
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
60
W
T_a = 25°C
3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V_BE
I_CBO
I_EBO
h_FE1
h_FE2 ^*
h_FE3
V_CE(sat)
f_T
C_ob
Conditions
V_CE = −5 V, I_C = −3 A
V_CB = −100 V, I_E = 0
V_EB = −3 V, I_C = 0
V_CE = −5 V, I_C = −20 mA
V_CE = −5 V, I_C = −1 A
V_CE = −5 V, I_C = −3 A
I_C = −3 A, I_B = − 0.3 A
V_CE = −5 V, I_C = − 0.5 A, f = 1 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
−1.8
V
−50 µA
−50 µA
20

40
200
20
−2.0
V
20
MHz
170
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
h_FE2
40 to 80
60 to 120 100 to 200
Publication date: March 2003
SJD00038BED
1