2SB1030 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SB1030
–30
base voltage 2SB1030A
V_CBO
–60
V
Collector to 2SB1030
–25
V_CEO
V
emitter voltage 2SB1030A
–50
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base 2SB1030
voltage
2SB1030A
Collector to emitter 2SB1030
voltage
2SB1030A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
V_CE = –20V, I_B = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA^*2
V_CE = –10V, I_C = –500mA^*2
I_C = –300mA, I_B = –30mA^*2
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
min
typ
max Unit
– 0.1 µA
–1
µA
–30
V
–60
–25
V
–50
–7
V
85
340
40
– 0.35 – 0.6
V
200
MHz
6
15
pF
*2 _{Pulse measurement}
1