2SB1011 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP triple diffusion planar type

Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
■ Features
• High collector-base voltage (Emitter open) V_CBO
• High collector-emitter voltage (Base open) V_CEO
• Large collector power dissipation P_C
• Low collector-emitter saturation voltage V_CE(sat)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−400
V
Collector-emitter voltage (Base open) V_CEO
−400
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation
P_C
1.2
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) V_CBO I_C = −100 µA, I_E = 0
−400
V
Collector-emitter voltage (Base open) V_CEO I_C = −500 µA, I_B = 0
−400
V
Emiter-base voltage (Collector open) V_EBO I_E = −100 µA, I_C = 0
−5
V
Forward current transfer ratio
h_FE V_CE = −5 V, I_C = −30 mA
30

Collector-emitter saturation voltage
V_CE(sat) I_C = −50 mA, I_B = −5 mA
−2.5
V
Base-emitter saturation voltage
V_BE(sat) I_C = −50 mA, I_B = −5 mA
−1.5
V
Transition frequency
f_T
V_CB = −30 V, I_E = 20 mA, f = 200 MHz
70
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −30 V, I_E = 0, f = 1 MHz
9
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00036BED
1