2SB0976 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Low-Frequency Output Amplification

Transistors
2SB0976 (2SB976)
Silicon PNP epitaxial planar type
For low-frequency output amplification
For DC-DC converter
For stroboscope
5.0±0.2
Unit: mm
4.0±0.2
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Large collector current I_C
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−27
V
Collector-emitter voltage (Base open) V_CEO
−18
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−5
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
0.75
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.7±0.1
0.45^{+–00..115}
2.5^{+–00..26}
2.5^{+–00..26}
0.45^{+–00..115}
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-emitter voltage (Base open) V_CEO I_C = −1 mA, I_B = 0
−18
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −10 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio ^{*1, 2}
h_FE V_CE = −2 V, I_C = −2 A
125
Collector-emitter saturation voltage ^*1 V_CE(sat) I_C = −3 A, I_B = − 0.1 A
Transition frequency
f_T
V_CB = −6 V, I_E = 50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −20 V, I_E = 0, f = 1 MHz
Typ Max
− 0.4
120
60
−100
−1
625
−1.0
Unit
V
V
nA
µA

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
Q
R
h_FE
125 to 205 180 to 625
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00064BED
1