2SB0968 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Low-Frequency Output Amplification

Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
■ Features
• Possible to solder radiation fin directly to printed circuit board
• High collector-emitter voltage (Base open) V_CEO
• Large collector power dissipation P_C
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−40
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−1.5
A
Peak collector current
I_CP
−3
A
Collector power dissipation (T_C = 25°C) P_C
10
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
1.0±0.1
2
0.1±0.05
0.5±0.1
1
3 0.75±0.1
2.3±0.1
4.6±0.1
(5.3)
(4.35)
(3.0)
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −1 mA, I_E = 0
−50
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−40
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = −5 V, I_C = −1 A
80
h_FE2 V_CE = −5 V, I_C = −1 mA
10
Collector-emitter saturation voltage
V_CE(sat) I_C = −1.5 A, I_B = − 0.15 A
Base-emitter saturation voltage
V_BE(sat) I_C = −2 A, I_B = − 0.2 A
Transition frequency
f_T
V_CE = −5 V, I_C = − 0.5 A, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −20 V, I_E = 0, f = 1 MHz
Typ Max
−1
−100
−10
220
−1
−1.5
150
45
Unit
V
V
µA
µA
µA

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h_FE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
1