2SB0952 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Low-Voltage Switching

Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0952 V}CBO
−40
V
(Emitter open)
2SB0952A
−50
Collector-emitter voltage ^{2SB0952 V}CEO
−20
V
(Base open)
2SB0952A
−40
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−7
A
Peak collector current
I_CP
−12
A
Collector power dissipation
P_C
30
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage ^{2SB0952 V}CEO ^IC ^{= −10 mA, I}B ^{= 0}
−20
V
(Base open)
2SB0952A
−40
Collector-base cutoff
2SB0952 I_CBO V_CB = −40 V, I_E = 0
current (Emitter open)
2SB0952A
V_CB = −50 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio
h_FE1 V_CE = −2 V, I_C = − 0.1 A
45
h_FE2 ^* V_CE = −2 V, I_C = −2 A
60
Collector-emitter saturation voltage
V_CE(sat) I_C = −5 A, I_B = − 0.16 A
Base-emitter saturation voltage
V_BE(sat) I_C = −5 A, I_B = − 0.16 A
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
−50 µA
−50
−50 µA

260
− 0.6 V
−1.5
V
150
MHz
140
MHz
Turn-on time
Storage time
Fall time
t_on
I_C = −2 A
t_stg
I_B1 = −66 mA, I_B2 = 66 mA
t_f
V_CC = −20 V
0.1
µs
0.5
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
h_FE2
R
60 to 120
Q
90 to 180
P
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
1