2SB0950 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification And Switching

Power Transistors
2SB0950 (2SB950), 2SB0950A (2SB950A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
■ Features
• High forward current transfer ratio h_FE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings T_C = 25°C
1.4±0.1
1.3±0.2
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0950 V}CBO
−60
V
(Emitter open)
2SB0950A
−80
Collector-emitter voltage ^{2SB0950 V}CEO
−60
V
(Base open)
2SB0950A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power
P_C
40
W
dissipation
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
■ Electrical Characteristics T_C = 25°C ± 3°C
0.8±0.1
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage ^{2SB0950 V}CEO ^IC ^{= −30 mA, I}B ^{= 0}
−60
V
(Base open)
2SB0950A
−80
Base-emitter voltage
V_BE V_CE = −3 V, I_C = −3 A
−2.5
V
Collector-base cutoff
2SB0950 I_CBO V_CB = −60 V, I_E = 0
−200 µA
current (Emitter open)
2SB0950A
V_CB = −80 V, I_E = 0
−200
Collector-emitter cutoff 2SB0950 ICEO VCE = −30 V, IB = 0
−500 µA
current (Base open)
2SB0950A
V_CE = −40 V, I_B = 0
−500
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
−2
mA
Forward current transfer ratio
h_FE1 V_CE = −3 V, I_C = − 0.5 A
1 000

h_FE2 ^* V_CE = −3 V, I_C = −3 A
1 000
10 000
Collector-emitter saturation voltage V_CE(sat)1 I_C = −3 A, I_B = −12 mA
−2
V
V_CE(sat)2 I_C = −5 A, I_B = −20 mA
−4
V
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
20
MHz
Turn-on time
t_on
I_C = −3 A, I_B1 = −12 mA, I_B2 = 12 mA
0.3
µs
Storage time
t_stg
V_CC = −50 V
2
µs
Fall time
t_f
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
h_FE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
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