2SB0949 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification And Switching

Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio h_FE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0949 V}CBO
−60
V
(Emitter open)
2SB0949A
−80
Collector-emitter voltage 2SB0949 VCEO
−60
V
(Base open)
2SB0949A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−4
A
Collector power
T_C = 25°C P_C
35
W
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
dissipation
2
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
■ Electrical Characteristics T_a = 25°C ± 3°C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage ^{2SB0949 V}CEO ^IC ^{= −30 mA, I}B ^{= 0}
−60
V
(Base open)
2SB0949A
−80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
V_BE
2SB0949 I_CBO
2SB0949A
Collector-emitter cutoff
current (Base open)
2SB0949 I_CEO
2SB0949A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_EBO
h_FE1
h_FE2 ^*
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = −4 V, I_C = −2 A
V_CB = −60 V, I_E = 0
V_CB = −80 V, I_E = 0
V_CE = −30 V, I_B = 0
V_CE = −40 V, I_B = 0
V_EB = −5 V, I_C = 0
V_CE = −4 V, I_C = −1 A
V_CE = −4 V, I_C = −2 A
I_C = −2 A, I_B = −8 mA
V_CE = −10 V, I_C = − 0.5 A, f = 1 MHz
I_C = −2 A, I_B1 = −8 mA, I_B2 = 8 mA
V_CC = −50 V
1 000
1 000
−2.8
V
−1
mA
−1
−2
mA
−2
−2
mA

10 000
−2.5
V
20
MHz
0.4
µs
1.5
µs
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
Q
P
h_FE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00028BED
1