2SB0942 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Low-Frequency Power Amplification

Power Transistors
2SB0942 (2SB942), 2SB0942A (2SB942A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
■ Features
• High forward current transfer ratio h_FE which has satisfactory linearity
• Large collector-emitter saturation voltage V_CE(sat)
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0942 V}CBO
−60
V
(Emitter open)
2SB0942A
−80
Collector-emitter voltage ^{2SB0942 V}CEO
−60
V
(Base open)
2SB0942A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power
P_C
40
W
dissipation
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
1.4±0.1
0.8±0.1
1.3±0.2
0.5^{+–00..12}
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB0942 VCEO IC = −30 mA, IB = 0
−60
V
(Base open)
2SB0942A
−80
Base-emitter voltage
V_BE V_CE = −4 V, I_C = −3 A
Collector-emitter
2SB0942 I_CES V_CE = −60 V, V_BE = 0
cutoff current (E-B short) _2SB0942A
V_CE = −80 V, V_BE = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −30 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = −4 V, I_C = −1 A
40
h_FE2 V_CE = −4 V, I_C = −3 A
15
Collector-emitter saturation voltage
V_CE(sat) I_C = −4 A, I_B = − 0.4 A
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.1 A, f = 10 MHz
Turn-on time
t_on
I_C = −4 A, I_B1 = − 0.4 A, I_B2 = 0.4 A
Storage time
t_stg
V_CC = −50 V
Fall time
t_f
−2
V
−400 µA
−400
−700 µA
−1
mA
250

−1.5
V
30
MHz
0.2
µs
0.5
µs
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
Q
P
h_FE1
40 to 90
70 to 150 120 to 250
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00022BED
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