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2SB0939 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Midium-Speed Power Switching | |||
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Power Transistors
2SB0939 (2SB939), 2SB0939A (2SB939A)
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262, 2SD1262A
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
â Features
⢠High forward current transfer ratio hFE
⢠High-speed switching
⢠N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
â Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
Collector-base voltage 2SB0939 VCBO
â60
V
(Emitter open)
2SB0939A
â80
Collector-emitter voltage 2SB0939 VCEO
â60
V
(Base open)
2SB0939A
â80
Emitter-base voltage (Collector open) VEBO
â7
V
Collector current
IC
â8
A
Peak collector current
ICP
â12
A
Collector power dissipation
PC
45
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
â Electrical Characteristics TC = 25°C ± 3°C
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB0939 VCEO IC = â30 mA, IB = 0
â60
V
(Base open)
2SB0939A
â80
Collector-base cut-off
2SB0939 ICBO VCB = â60 V,IE = 0
â100 µA
current (Emitter open)
2SB0939A
VCB = â80 V,IE = 0
â100
Emitter-base cutoff current (Collector open) IEBO VEB = â7 V,IC = 0
â2
mA
Forward current transfer ratio
hFE1 * VCE = â3 V, IC = â4 A
2 000
10 000 
hFE2 VCE = â3 V, IC = â8 A
500
Base-emitter saturation voltage
VBE(sat) IC = â4 A,IB = â8 mA
â2
V
Collector-emitter saturation voltage
VCE(sat) IC = â4 A, IB = â8 mA
â1.5
V
Transition frequency
fT
VCE = â10 V, IC = â0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = â4 A,
0.5
µs
Strage time
tstg
IB1 = â8 mA, IB2 = 8 mA
2
µs
Fall time
tf
VCC = â50 V
1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
2 000 to 5 000 4 000 to 10 000
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJD00020BED
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