2SB0938 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification And Switching

Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
Silicon PNP epitaxial planar type Darlington
8.5±0.2
For power amplification and switching
6.0±0.2
Complementary to 2SD1261, 2SD1261A
Unit: mm
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio h_FE
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
Collector-base voltage
(Emitter open)
2SB0938
2SB0938A
Collector-emitter voltage 2SB0938
(Base open)
2SB0938A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
T_a = 25°C
Storage temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
−60
−80
−60
−80
−5
−4
−8
40
1.3
150
−55 to +150
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
V
V
V
A
A
W
°C
°C
Conditions
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
Min Typ Max Unit
Collector-emitter voltage ^{2SB0938 V}CEO ^IC ^{= −30 mA, I}B ^{= 0}
−60
V
(Base open)
2SB0938A
−80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
V_BE
2SB0938 I_CBO
2SB0938A
Collector-emitter cutoff
current (Base open)
2SB0938 I_CEO
2SB09378
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
I_EBO
h_FE1
h_FE2 ^*
V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Strage time
t_stg
V_CE = −3 V,I_C = −3 A
V_CB = −60 V,I_E = 0
V_CB = −80 V,I_E = 0
V_CE = −30 V,I_B = 0
V_CE = −40 V,I_B = 0
V_EB = −5 V,I_C = 0
V_CE = −3 V, I_C = −0.5 A
V_CE = −3 V, I_C = −3 A
I_C = −3 A, I_B = −12 mA
I_C = −5 A, I_B = −20 mA
V_CE = −10 V, I_C = −0.5 A, f = 1 MHz
I_C = −3 A,
I_B1 = −12 mA, I_B2 = 12 mA
1 000
2 000
−2.5
V
−200 µA
−200
−500 µA
−500
−2
mA

10 000
−2
V
−4
15
MHz
0.3
µs
2
µs
Fall time
t_f
V_CC = −50 V
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
2 000 to 5 000 4 000 to 10 000 Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJD00019BED
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