2SB0937 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification And Switching

Power Transistors
2SB0937 (2SB937), 2SB0937A (2SB937A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
8.5±0.2
6.0±0.2
Complementary to 2SD1260, 2SD1260A
Unit: mm
3.4±0.3
1.0±0.1
■ Features
• High forward current transfer ratio h_FE
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T_C = 25°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0) 1.3
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0937 V}CBO
−60
V
(Emitter open)
2SB0937A
−80
Collector-emitter voltage ^{2SB0937 V}CEO
−60
V
(Base open)
2SB0937A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−4
A
Collector power dissipation
P_C
35
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
■ Electrical Characteristics T_C = 25°C ± 3°C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage ^{2SB0937 V}CEO ^IC ^{= −30 mA, I}B ^{= 0}
−60
V
(Base open)
2SB0937A
−80
Base-emitter voltage
V_BE V_CE = −4 V,I_C = −2 A
−2.8
V
Collector-base cutoff
2SB0937 I_CBO V_CB = −60 V,I_E = 0
−1
mA
current (Emitter open)
2SB0937A
V_CB = −80 V,I_E = 0
−1
Collector-emitter cutoff 2SB0937 ICEO VCE = −30 V,IB = 0
−2
mA
current (Base open)
2SB0937A
V_CE = −40 V,I_B = 0
−2
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V,I_C = 0
−2
mA
Forward current transfer ratio
h_FE1 V_CE = −4 V, I_C = −1 A
1 000

h_FE2 ^* V_CE = −4 V, I_C = −2 A
2 000
10 000
Collector-emitter saturation voltage
V_CE(sat) I_C = −2 A, I_B = −8 mA
−2.5
V
Transition frequency
f_T
V_CE = −10 V, I_C = −0.5 A, f = 1 MHz
20
MHz
Turn-on time
t_on
I_C = −2 A,
0.4
µs
Strage time
t_stg
I_B1 = −8 mA, I_B2 = 8 mA
1.5
µs
Fall time
t_f
V_CC = −50 V
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE1
2 000 to 5 000 4 000 to 10 000 _{Note) The part number in the parenthesis shows conventional part number.}
Publication date: March 2003
SJD00018BED
1