2SB0930 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification

Power Transistors
2SB0930 (2SB930), 2SB0930A (2SB930A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253, 2SD1253A
■ Features
• High forward current transfer ratio h_FE which has satisfactory linearity
• Low collector-emitter saturation voltage V_CE(sat)
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage ^{2SB0930 V}CBO
−60
V
(Emitter open)
2SB0930A
−80
Collector-emitter voltage ^{2SB0930 V}CEO
−60
V
(Base open)
2SB0930A
−80
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−4
A
Peak collector current
I_CP
−8
A
Collector power dissipation
P_C
40
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage ^{2SB0930 V}CEO ^IC ^{= −30 mA, I}B ^{= 0}
−60
V
(Base open)
2SB0930A
−80
Collector-emitter cutoff 2SB0930 ICES VCE = −60 V, VBE = 0
−400 µA
current (E-B short)
2SB0930A
V_CE = −80 V, V_BE = 0
−400
Collector-emitter cutoff ^{2SB0930 I}CEO ^VCE ^{= −30 V, I}B ^{= 0}
−700 µA
current (Base open)
2SB0930A
V_CE = −60 V, I_B = 0
−700
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
−1
mA
Forward current transfer ratio
h_FE1 ^* V_CE = −4 V, I_C = −1 A
70
250

h_FE2 V_CE = −4 V, I_C = −3 A
15
Base-emitter voltage
V_BE V_CE = −4 V, I_C = −3 A
−2.0
V
Collector-emitter saturation voltage
V_CE(sat) I_C = −4 A, I_B = −0.4 A
−1.5
V
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
20
MHz
Turn-on time
t_on
I_C = −4 A,
0.2
µs
Storage time
t_stg
I_B1 = − 0.4 A, I_B2 = 0.4 A
0.5
µs
Fall time
t_f
V_CC = −50 V
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
70 to 150 120 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00012BED
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