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2SB0929 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification | |||
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Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252, 2SD1252A
â Features
⢠High forward current transfer ratio hFE which has satisfactory linearity
⢠Low collector-emitter saturation voltage VCE(sat)
⢠N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
â Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB0929 VCBO
â60
V
(Emitter open)
2SB0929A
â80
Collector-emitter voltage 2SB0929 VCEO
â60
V
(Base open)
2SB0929A
â80
Emitter-base voltage (Collector open) VEBO
â5
V
Collector current
IC
â3
A
Peak collector current
ICP
â5
A
Collector power dissipation
PC
35
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
â Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB0929 VCEO IC = â30 mA, IB = 0
â60
V
(Base open)
2SB0929A
â80
Collector-emitter cutoff 2SB0929 ICES VCE = â60 V, VBE = 0
â200 µA
current (E-B short)
2SB0929A
VCE = â80 V, VBE = 0
â200
Collector-emitter cutoff 2SB0929 ICEO VCE = â30 V, IB = 0
â300 µA
current (Base open)
2SB0929A
VCE = â60 V, IB = 0
â300
Emitter-base cutoff current (Collector open) IEBO VEB = â5 V, IC = 0
â1
mA
Forward current transfer ratio
hFE1 * VCE = â4 V, IC = â1 A
70
250

hFE2 VCE = â4 V, IC = â3 A
10
Base-emitter voltage
VBE VCE = â4 V, IC = â3 A
â1.8
V
Collector-emitter saturation voltage
VCE(sat) IC = â3 A, IB = â0.375 A
â1.2
V
Transition frequency
fT
VCE = â10 V, IC = â 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = â1 A,
0.5
µs
Strage time
tstg
IB1 = â 0.1 A, IB2 = 0.1 A
1.2
µs
Fall time
tf
VCC = â50 V
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00011BED
1
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