2SB0928 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Amplification

Power Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
Silicon PNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.2
Unit : mm
3.4±0.3
1.0±0.1
■ Features
• High collector-emitter voltage (Base open) V_CEO
• High collector power dissipation P_C
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0) 1.3
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−200
V
Collector-emitter voltage 2SB0928 V_CEO
−150
V
(Base open)
2SB0928A
−180
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−3
A
Collector power
P_C
30
W
dissipation
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 ∼ +150 °C
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = −500 µA, I_E = 0
−200
V
Collector-emitter voltage 2SB0928 V_CEO I_C = −5 mA, I_B = 0
−150
V
(Base open)
2SB0928A
−180
Emitter-base voltage (Collector open) V_EBO I_E = −500 µA, I_C = 0
−6
Collector-base cutoff current (Emitter open) I_CBO V_CB = −200 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −4 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = −10 V, I_C = −150 mA
60
h_FE2 V_CE = −10 V, I_C = −400 mA
50
Base-emitter voltage
V_BE V_CE = −10 V, I_C = −400 mA
Collector-emitter saturation voltage
V_CE(sat) I_C = −500 mA, I_B = −50 mA
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
V
−50 µA
−50 µA
240

−1.0
V
−1.0
V
40
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
60 to 140 100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00010BED
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