2SB0873 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Large collector current I_C
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−30
V
Collector-emitter voltage (Base open) V_CEO
−20
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−5
A
Peak collector current
I_CP
−10
A
Collector power dissipation
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45^{+–00..12}
0.45^{+–00..12}
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-emitter voltage (Base open) V_CEO I_C = −1 mA, I_B = 0
−20
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −10 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio ^{*1, 2}
h_FE V_CE = −2 V, I_C = −2 A
90
Collector-emitter saturation voltage ^*1 V_CE(sat) I_C = −3 A, I_B = − 0.1 A
Transition frequency
f_T
V_CB = −6 V, I_E = 50 mA, f = 200 MHz
Collector output capacitance
(Common-emitter reverse transfer)
C_ob V_CB = −20 V, I_E = 0, f = 1 MHz
Typ Max
−100
−100
625
−1
120
85
Unit
V
V
nA
nA

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
h_FE
90 to 135 120 to 205 180 to 625
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00061BED
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