2SB0819 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For Low-Frequency Output Amplification

Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
■ Features
• High collector-emitter voltage (Base open) V_CEO
• Large collctor power dissipation P_C
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−40
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−1.5
A
Peak collector current
I_CP
−3
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) *: Print circuit board: Copper foil area of 1 cm² or more, and the board
thickness of 1.7 mm for the collector portion
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^{*1, 2}
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C = −1 mA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −20 V, I_E = 0
V_CE = −10 V, I_B = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 A
I_C = −1.5 A, I_B = − 0.15 A
I_C = −2 A, I_B = − 0.2 A
V_CB = −5 V, I_E = 0.5 A, f = 200 MHz
V_CB = −20 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
−50
V
−40
V
−1
µA
−100 µA
−10 µA
80
220

−1
V
−1.5
V
150
MHz
45
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
Q
R
h_FE
80 to 160 120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00059BED
1