2SB0788 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For High Breakdown Voltage Low-noise Amplification

Transistors
2SB0788 (2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
■ Features
• High collector-emitter voltage (Base open) V_CEO
• Low noise voltage NV
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−120
V
Collector-emitter voltage (Base open) V_CEO
−120
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−20
mA
Peak collector current
I_CP
−50
mA
Collector power dissipation
P_C
400
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Noise voltage
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
NV
I_C = −10 µA, I_E = 0
I_C = −1 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_CE = −2 V, I_C = −2 A
I_C = −20 mA, I_B = −2 mA
V_CE = −40 V, I_C = −1 mA, G_V = 80 dB
R_g = 100 kΩ, Function = FLAT
−120
−120
−7
180
V
V
V
−100 nA
−1
µA
520

− 0.6 V
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h_FE
180 to 360 260 to 520
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00055BED
1