2SB0726 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For general amplification

Transistor
2SB0726 (2SB726)
Silicon PNP epitaxial planer type
For general amplification
s ^Features
q High foward current transfer ratio h_FE.
q High collector to emitter voltage V_CEO.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–80
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–100
mA
Collector power dissipation P_C
250
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45^+Ð00..115
2.5^+Ð00..26
2.5^+Ð00..26
0.45^+Ð00..115
1 23
1:Emitter
2:Collector
3:Base
EIAJ:SC–43A
TO-92-A1 Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
V_CB = –10V, I_E = 0
–100 nA
V_CE = –10V, I_B = 0
–1
µA
I_C = –10µA, I_E = 0
–80
V
I_C = –2mA, I_B = 0
–80
V
I_E = –10µA, I_C = 0
–5
V
V_CB = –5V, I_E = –2mA
180
700
I_C = –20mA, I_B = –2mA
– 0.6
V
V_CE = –1V, I_C = –100mA
–1
–1.2
V
V_CB = –5V, I_E = 2mA, f = 200MHz
150
MHz
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
Note.) The Part number in the Parenthesis shows conventional part number.
184