2SA921 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
s ^Features
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–120
V
Collector to emitter voltage V_CEO
–120
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–50
mA
Collector current
I_C
–20
mA
Collector power dissipation P_C
250
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
Noise voltage
NV
V_CB = –50V, I_E = 0
–100 nA
V_CE = –50V, I_B = 0
–1
µA
I_C = –10µA, I_E = 0
–120
V
I_C = –1mA, I_B = 0
–120
V
I_E = –10µA, I_C = 0
–5
V
V_CE = –5V, I_C = –2mA
180
520
I_C = –20mA, I_B = –2mA
– 0.6
V
V_CB = –5V, I_E = 2mA, f = 200MHz
200
MHz
V_CE = –40V, I_C = –1mA, G_V = 80dB
R_g = 100kΩ, Function FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
1