2SA838 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
s ^Features
q High transition frequency f_T.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–30
mA
Collector power dissipation P_C
250
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
I_CBO
I_CEO
I_EBO
h_FE*
V_CE(sat)
V_BE
f_T
NF
Reverse transfer impedance
Z_rb
Common emitter reverse transfer
capacitance
C_re
V_CB = –10V, I_E = 0
V_CE = –20V, I_B = 0
– 0.1
µA
–100
V_EB = –5V, I_C = 0
–10
µA
V_CE = –10V, I_C = –1mA
70
220
I_C = –10mA, I_B = –1mA
– 0.1
V
V_CE = –10V, I_C = –1mA
– 0.7
V
V_CB = –10V, I_E = 1mA, f = 200MHz 150
300
MHz
V_CB = –10V, I_E = 1mA, f = 5MHz
2.8
4.0
dB
V_CE = –10V, I_C = –1mA, f = 2MHz
22
50
Ω
V_CE = –10V, I_C = –1mA,
f = 10.7MHz
1.2
2.0
pF
*_{hFE Rank classification}
Rank
B
h_FE
70 ~ 140
C
110 ~ 220
1