2SA777 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency driver amplification)

Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1509
s ^Features
q High collector to emitter voltage V_CEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–80
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –5V, I_C = –500mA
I_C = –300mA, I_B = –30mA
I_C = –300mA, I_B = –30mA
V_CB = –10V, I_E = 50mA, f = 100MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
typ
max Unit
– 0.1 µA
–80
V
–80
V
–5
V
90
220
50
100
– 0.2 – 0.4
V
– 0.85 –1.2
V
120
MHz
11
20
pF
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
90 ~ 155 130 ~ 220
1