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2SA720A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency driver amplification) | |||
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Transistor
2SA720A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â80
V
Collector to emitter voltage VCEO
â70
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â1
A
Collector current
IC
â 0.5
A
Collector power dissipation PC
625
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 â0.1
1.27
+0.2
0.45 â0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TOâ92
EIAJ:SCâ43A
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = â20V, IE = 0
IC = â10µA, IE = 0
IC = â2mA, IB = 0
IE = â10µA, IC = 0
VCE = â10V, IC = â150mA*2
VCE = â10V, IC = â500mA*2
IC = â300mA, IB = â30mA*2
IC = â300mA, IB = â30mA*2
VCB = â10V, IE = 50mA, f = 100MHz
VCB = â10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1
85 ~ 170 120 ~ 240
min
typ
max Unit
â 0.1 µA
â80
V
â70
V
â5
V
85
240
40
â 0.2 â 0.6
V
â 0.85 â1.5
V
120
MHz
20
30
pF
*2 Pulse measurement
1
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