2SA683 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
s ^Features
q Complementary pair with 2SC1383 and 2SC1384.
q Allowing supply with the radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SA683
–30
base voltage 2SA684
V_CBO
–60
V
Collector to 2SA683
–25
V_CEO
V
emitter voltage 2SA684
–50
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1.5
A
Collector current
I_C
–1
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45^{+–00..21}
1.27
1.27
123
0.45^{+–00..21}
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base
2SA683
voltage
2SA684
Collector to emitter 2SA683
voltage
2SA684
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –500mA
V_CE = –5V, I_C = –1A
I_C = –500mA, I_B = –50mA
I_C = –500mA, I_B = –50mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
typ
max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5
V
85
340
50
– 0.2 – 0.4
V
– 0.85 –1.2
V
200
MHz
20
30
pF
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1