2SA2164 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For high-frequency amplification

Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
 Features
 High transfer ratio f_T
 SSS-Mini type package, allowing downsizing of the equipment and　
automatic insertion through the tape packing.
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
–30
V
V_CEO
–20
V
V_EBO
–5
V
I_C
–30
mA
P_C
100
mW
T_j
125
°C
T_stg –55 to +125 °C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10^{+–00..0025}
1: Base
2: Emitter
3: Collector
Marking Symbol : E
SSSMini3-F1 Package
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Base-emitter voltage
V_BE V_CE = –10 V, I_C = –1 mA
– 0.7
Collector-base cutoff current (Emitter open) I_CBO V_CB = –10 V, I_E = 0
Collector-emitter cut-off current (Base open) I_CEO V_CE = –20 V, I_B = 0
Emitter-base cut-off current (Collector open) I_EBO V_EB = –5 V, I_C = 0
Forward current transfer ratio
h_FE V_CB = –10 V, I_E = 1 mA
70
Collector-emitter saturation voltage
V_CE(sat) I_C = –10 mA, I_B = –1 mA
– 0.1
Transition frequency
f_T V_CB = –10 V, I_E = 1 mA, f = 200 MHz
150
300
Noise figure
NF V_CB = –10 V, I_E = 1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Z_rb V_CB = –10 V, I_E = 1 mA, f = 2 MHz
22
Common-emitter reverse transfer capacitance C_re V_CB = –10 V, I_E = 1 mA, f = 10.7 MHz
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
– 0.1
–100
–10
220
Unit
V
µA
µA
µA

V
MHz
dB
Ω
pF
Publication date : December 2004
SJC00330AED
1