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2SA2162 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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Transistors
2SA2162
Silicon PNP epitaxial planar type
For general ampliï¬cation
Complementary to 2SC6036
ï¢ Features
ï Low collector-emitter saturation voltage VCE(sat)
ï SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
â15
V
VCEO
â12
V
VEBO
â5
V
IC
â500
mA
ICP
â1
A
PC
100
mW
Tj
125
°C
Tstg â55 to +125 °C
0.33+â00..0052
3
0.23+â00..0052
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+â00..0052
1: Base
2: Emitter
3: Collecter
SSSMini3-F1 Package
Marking Symbol : 2U
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
VCBO IC = â10 µA, IE = 0
â15
Collector-emitter voltage (Base open)
VCEO IC = â1 mA, IB = 0
â12
Emitter-base voltage (Collector open)
VEBO IE = â10 µA, IC = 0
â5
Collector-base cutoff current (Emitter open) ICBO VCB = â10 V, IE = 0
Forward current transfer ratio
hFE VCE = â2 V, IC = â10 mA
270
Collector-emitter saturation voltage
VCE(sat) IC = â200 mA, IB = â10 mA
Transition frequency
fT VCB = â2 V, IE = 10 mA, f = 200 MHz
200
Collector output capacitance
(Common base, input open circuited)
Cob VCB = â10 V, f = 1 MHz
4.5
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
â 0.1
680
â250
Unit
V
V
V
µA

mV
MHz
pF
Publication date : December 2004
SJC00323AED
1
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