2SA2140 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA2140
Silicon PNP epitaxial planar type
For power amplification
For TV VM circuit
■ Features
• Satisfactory linearity of forward current transfer ratio h_FE
• High transition frequency (f_T)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−180
V
Collector-emitter voltage (Base open) V_CEO
−180
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−1.5
A
Peak collector current
I_CP
−3
A
Collector power dissipation
P_C
20
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −10 mA, I_B = 0
−180
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −180 V, I_E = 0
−100 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = −6 V, I_C = 0
−100 µA
Forward current transfer ratio ^*
h_FE V_CE = −5 V, I_C = − 0.1 A
60
240

Collector-emitter saturation voltage
V_CE(sat) I_C = −1 A, I_B = − 0.1 A
− 0.5 V
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.2 A, f = 10 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
30
pF
Turn-on time
Storage time
Fall time
t_on I_C = − 0.4 A, Resistance loaded
t_stg
I_B1 = 0.04 A, I_B2 = − 0.04 A
t_f
V_CC = 100 V
0.1
µs
1.0
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE
60 to 140
120 to 240
Publication date: July 2004
SJD00316AED
1