2SA2118 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Power Transistors Silicon PNP epitaxial planar type

Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
■ Features
• Satisfactory linearity of forward current transfer ratio h_FE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−200
V
Collector-emitter voltage (Base open) V_CEO
−180
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−3
A
Collector power
P_C
25
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = −50 µA, I_E = 0
−200
V
Collector-emitter voltage (Base open) V_CEO I_C = −5 mA, I_B = 0
−180
V
Emitter-base voltage (Collector open) V_EBO I_E = −500 µA, I_C = 0
−6
V
Base-emitter voltage
V_BE V_CE = −10 V, I_C = −400 mA
−1
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −200 V, I_E = 0
−50 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = −4 V, I_C = 0
−50 µA
Forward current transfer ratio
h_FE1 ^* V_CE = −10 V, I_C = −150 mA
60
240

h_FE2 V_CE = −10 V, I_C = −400 mA
50
Collector-emitter saturation voltage
V_CE(sat) I_C = −500 mA, I_B = −50 mA
−1
V
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.5 A, f = 10 MHz
30
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE1
60 to 140 100 to 240
Publication date: July 2004
SJD00315AED
1