2SA2084 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■ Features
• High collector-emitter voltage (Base open) V_CEO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−300
V
Collector-emitter voltage (Base open) V_CEO
−300
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−70
mA
Peak collector current
I_CP
−100
mA
Collector power dissipation
P_C
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 7N
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
V_CEO
V_EBO
h_FE
V_CE(sat)
C_ob
I_C = −100 µA, I_B = 0
I_E = −1 µA, , I_C = 0
V_CE = −10 V, I_C = −5 mA
I_C = −10 mA, I_B = −1 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
−300
V
−5
V
30
150

− 0.6 V
7
pF
Transition frequency
f_T
V_CB = −10 V, I_E = 10 mA, f = 200 MHz
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
P
Q
h_FE
30 to 100
60 to 150
Publication date: January 2003
SJC00286AED
1