2SA2079 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
 Features
 High forward current transfer ratio h_FE
 Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
–45
V
V_CEO
–45
V
V_EBO
–7
V
I_C
–100
mA
I_CP
–200
mA
P_C
100
mW
T_j
125
°C
T_stg –55 to +125 °C
Unit: mm
3
2
1
1.00±0.05
0.39^{+−00..0013}
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3D
ML3-N2 Package
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = –10 µA, I_E = 0
–45
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
I_C = –2 mA, I_B = 0
I_E = –10 µA, I_C = 0
V_CB = –20 V, I_E = 0
V_CE = –10 V, I_B = 0
V_CE = –10 V, I_C = –2 mA
I_C = –100 mA, I_B = –10 mA
V_CB = –10 V, I_E = 1 mA, f = 200 MHz
V_CB = –10 V, I_E = 0, f = 1 MHz
–45
–7
– 0.1
–100
180
390
– 0.2 – 0.5
80
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V
µA
µA

V
MHz
pF
Publication date : December 2004
SJC00326AED
1