2SA2078 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
■ Features
• High forward current transfer ratio h_FE
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10^{+–00..0025}
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
Marking Symbol: 7H
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−60
Collector-emitter voltage (Base open) V_CEO I_C = −100 µA, I_B = 0
−50
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −2 mA
180
Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.2
80
2.2
− 0.1
−100
390
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00302AED
1