2SA2077 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(Complementary to 2SC5845)

Transistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5845
■ Features
• High forward current transfer ratio h_FE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−45
V
Collector-emitter voltage (Base open) V_CEO
−45
V
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−100
mA
Peak collector current
I_CP
−200
mA
Collector power dissipation
P_C
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 7L
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−45
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−45
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −2 mA
160
Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.2
80
2.2
− 0.1
−100
460
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00301AED
1