2SA2075 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA2075
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
■ Features
• High-speed switching (t_stg: storage time/t_f: fall time is short)
• Low collector-emitter saturation voltage V_CE(sat)
• Superior forward current transfer ratio h_FE linearity
• Allowing supply with the radial taping (MT-4)
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−80
V
Collector-emitter voltage (Base open) V_CEO
−80
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−5
A
Collector power
T_C = 25°C P_C
15
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: A2075
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −10 mA, I_B = 0
−80
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −80 V, I_E = 0
−100 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = −80 V, I_B = 0
−100 µA
Forward current transfer ratio
h_FE1 V_CE = −4 V, I_C = −1 A
80
250

h_FE2 V_CE = −4 V, I_C = −3 A
30
Collector-emitter saturation voltage
V_CE(sat) I_C = −3 A, I_B = −375 mA
−1.0
V
Transition frequency
f_T
V_CE = 10 V, I_C = − 0.1 A, f = 10 MHz
100
MHz
Turn-on time
t_on I_C = −1 A, Resistance loaded
0.2
µs
Storage time
t_stg
I_B1 = − 0.1 A, I_B2 = 0.1 A
0.7
µs
Fall time
t_f
V_CC = −50 V
0.1
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJD00294AED
1