2SA2067 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA2067
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t_stg: storage time/t_f: fall time is short)
• Low collector-emitter saturation voltage V_CE(sat)
• Superior forward current transfer ratio h_FE linearity
• Allowing automatic insertion eith radial taping
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−60
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−3
A
Peak collector current
I_CP
−6
A
Collector power dissipation
P_C
15
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_CEO
I_EBO
h_FE1 ^*
h_FE2
V_CE(sat)
f_T
t_on
t_stg
t_f
I_C = −10 mA, I_B = 0
−60
V_CB = −60 V, I_E = 0
V_CE = −60 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −4 V, I_C = −1 A
120
V_CE = −4 V, I_C = −3 A
40
I_C = −3 A, I_B = − 375 mA
V_CE = −10 V, I_C = − 0.1 A, f = 10 MHz
I_C = −1 A, Resistance loaded
I_B1 = − 0.1 A, I_B2 = 0.1 A
V_CC = 50 V
V
−100 µA
−100 µA
−1
mA
320

− 0.8 V
90
MHz
0.3
µs
0.7
µs
0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
120 to 250 160 to 320
Publication date: January 2003
SJD00286BED
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