2SA2064 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA2064
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t_stg: storage time/t_f: fall time is short)
• Low collector-emitter saturation voltage V_CE(sat)
• Superior forward current transfer ratio h_FE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−10
A
Peak collector current
I_CP
−20
A
Collector power dissipation
P_C
25
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_CEO
h_FE1
h_FE2
V_CE(sat)
t_on
t_stg
t_f
I_C = −10 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_CE = −2 V, I_C = −1 A
V_CE = −2 V, I_C = −7 A
I_C = −5 A, I_B = − 250 mA
I_C = −4 A, Resistance loaded
I_B1 = − 0.4 A, I_B2 = 0.4 A
V_CC = −40 V
−50
V
−100 µA
−100 µA
200

100
− 0.5 V
0.5
µs
1.0
µs
0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00285BED
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