2SA2057 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA2057
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t_stg: storage time/t_f: fall time is short)
• Low collector-emitter saturation voltage V_CE(sat)
• Superior forward current transfer ratio h_FE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−60
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−3
A
Peak collector current ^*
I_CP
−6
A
Collector power dissipation
P_C
20
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: Non-repetitive peak collector current
2.54±0.30
5.08±0.50
123
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −10 mA, I_B = 0
−60
Collector-base cutoff current (Emitter open) I_CBO V_CB = −60 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −60 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −6 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = −4 V, I_C = −1 A
120
h_FE2 V_CE = −4 V, I_C = −3 A
40
Collector-emitter saturation voltage
V_CE(sat) I_C = −3 A, I_B = − 0.375 A
Transition frequency
f_T
V_CE = −10 V, I_C = − 0.1 A, f = 10 MHz
Turn-on time
t_on I_C = −1 A, Resistance loaded
Storage time
t_stg
I_B1 = − 0.1 A, I_B2 = 0.1 A
Fall time
t_f
V_CC = 50 V
−100
−100
−1
320
− 0.5
90
0.15 0.30
0.4 0.7
0.10 0.15
V
µA
µA
mA

V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE1
120 to 250 160 to 320
Publication date: January 2003
SJD00284BED
1